NanoMIR

PUBLICATIONS NANOMIR 2008

N. Baranov, J. Devenson, R. Teissier, O. Cathabard, “InAs-based quantum cascade lasers.
Photonics West” 2008 , San Jose, USA, 19-25 January, 2008

S. I. Rybchenko, R. Gupta, K. T. Lai, I. E. Itskevich, S. K. Haywood, V. Tasco, N. Deguffroy, A.N. Baranov, E. Tournié, “Conduction-band G-L crossover in III-V GaSb SAQDs induced by lattice mismatch strain”. One-Day Quantum Dot meeting, Imperial College, London, U.K., 11 January 2008

P. Christol, « Superréseaux InAs/GaSb : Nouvelle filière pour photodétection du proche infrarouge à l’infrarouge très lointain », Workshop DGA Détecteurs IR , Paris, Mars 2008

R. Teissier, J. Devenson, O. Cathabard, A. N. Baranov, “Short wavelength quantum cascade lasers emitting around 3 µm.”CLEO 2008, San Jose, USA, 4-9 May, 2008

L. Cerutti, A. Ducanchez, G. Narcy, P. Grech, G. Boissier, A. Garnache, E. Tournié, and F. Genty, “GaSb-based VCSELs emitting in the mid-infrared wavelength range (2-3 µm) grown by molecular beam epitaxy”. International Molecular Beam Epitaxy Conference (MBE international),Vancouver, Canada, 03-08 Aout 2008

F. Genty, L. Cerutti, A. Ducanchez, P. Grech, and E. Tournié, “Recent progress on electrically-pumped GaSb-based VCSELs emittingabove 2 µm for sensing applications
MIOMD IX”, Freiburg, Germany. 7-11 September 2008

A. N. Baranov, J. Devenson, R. Teissier, O. Cathabard, “InAs quantum cascade lasers.
MIOMD IX”, Freiburg, Germany, 7-11 September, 2008

A.M.Monakhov, J.V. Alexeenko, A.P. Astakhova , N.S. Averkiev , A.N. Baranov , G. Boissier , E.A.Grebenshchikova , A. Yu. Kislyakova , S. S. Kizhaev , V.V.Sherstnev , R.Teissier, Yu.P.Yakovlev , “MIR whispering gallery mode lasers”. MIOMD IX, Freiburg, Germany, 7-11 September, 2008

R. Teissier, « Les lasers à Cascade Quantique : Etat de l’art et avancées récentes
27èmes Journées Nationales d’Optique Guidée (JNOG 08) », Lannion, 20-22 Octobre 2008

P. Christol, “Antimonide-based detector structures for non-cryogenic operation
Workshop NATO (SET 137)”, Las Vegas, November 2008

B. Cocquelin, G. Lucas-Leclin, P. Georges, I. Sagnes, A. Garnache, “Design of a low-threshold VECSEL emitting at 852 nm for Cesium atomic clocks”, Optical and Quantum Electronics, vol. 40, p. 167 – 173, 2008

Huerta-Cuéllar, S. Guel-Sandoval, F. de Anda, V. H. Méndez-García, B. E. Torres-Loredo, A. Garnache, and A. Joullié, “Study of the photo-selective chemical etching of GaSb to manufacture microscopic mirrors”, Journal of Applied Electrochemistry, 38, 269, 2008.

A.Ducanchez, L. Cerutti, P.Grech and F.Genty, “Room Temperature Continuous Wave operation of electrically-injected Sb-based RC-LED emitting near 2.3 µm”, Superlattices and microstructures, Vol. 44, p 62-69, 2008

A.Ducanchez, L. Cerutti, A. Gassenq, P.Grech and F.Genty, “Fabrication and characterization of GaSb-based Monolithic Resonant-Cavity Light Emitting Diodes emitting around 2.3µm and including a Tunnel Junction”, IEEE J. Select. Topics in Quantum Electron, Vol.14 (4), 2008

L.Cerutti, A.Ducanchez, P.Grech, A. Garnache and F.Genty, “Room-temperature, monolithic, electrically-pumped type-I quantum-well Sb-based VCSELs emitting at 2.3 µm”, Electronics Letters, Vol. 44, p 203-205, 2008

J. Ristic, S. Fernandez-Garrido, E. Calleja, L. Cerutti, A. Trampert, U. Jahn, and K. Ploog, “Mechanisms of Spontaneous Growth of III-Nitride nanocolumns by Plasma-Assisted Molecular Beam Epitaxy”, Journal of Crystal Growth, Vol. 310, p 4035-4045, 2008

A.Ducanchez, L. Cerutti, P.Grech and F.Genty, “Room-Temperature Continuous-Wave Operation of 2.3 µm Sb-based Monolithic Vertical-Cavity Lasers Electrically-Pumped”, IEEE Photon. Techn. Lett., Vol. 20, No. 20, 2008

M. Triki, P. Cermak, L. Cerutti, A. Garnache, and D. Romanini, “Extended continuous tuning of a single–frequency diode–pumped vertical–external–cavity surface–emitting laser at 2.3 µm”, IEEE Photon. Techn. Lett., Vol. 20, No. 23, 2008

A.Ducanchez, L. Cerutti, P.Grech and F.Genty, “GaSb-based monolithic EP-VCSEL emitting above 2.5 µm”, Electronics Letters Vol. 44, p 1357-1359, 2008

D. Barat, J. Angellier, A. Vicet, Y. Rouillard, L. Le Gratiet, S. Guilet, A. Martinez, A. Ramdane, “Antimonide-based lasers and DFB laser diodes in the 2-2.7 µm wavelength range for absorption spectroscopy”, Applied Phys. B, (90), pp 201-204, 2008

G. Rainò, A. Salhi, V. Tasco, R. Intartaglia, R. Cingolani, Y. Rouillard, E. Tournié and M. De Giorgi, “Subpicosecond timescale carrier dynamics in GaInAsSb/AlGaAsSb double quantum wells emitting at 2.3 µm”, Appl. Phys. Lett. , 92, 101931, 2008

R. Intartaglia, G. Rainò, V. Tasco, F. Della Sala, R. Cingolani, M. De Giorgi, A.N. Baranov, N. Deguffroy, E. Tournié, and A. Trampert, “Type II transition in InSb-based nanostructures for Mid-Infrared applications”, J. Appl. Phys., 103, 114516, 2008

M. Debbichi, A. Ben Fredj, M. Saïd, J.L Lazzari, Y. Cuminal and P. Christol, “Nitrogen effect on optical gain and radiative current density for mid-infrared InAs(N)/GaSb/InAs(N) quantum-well laser”, Physica E, 40, 489-493, 2008

N. Sfina, J.-L. Lazzari, Y. Cuminal, P. Christol, M. Saïd. “Coulomb interaction of electron gas in Si/SiGe/Si W-designed type II multiple quantum wells”, Mat Science Engineering C, 28, 939, 2008

N. Sfina, J.L. Lazzari, Y. Cuminal, P. Christol, M. Saïd., “Simulation of pin heterojonctions built on strain-compensated Si/SiGe/Si multiple quantum wells for photodetection near 1.55µm”, Thin solid films, 517, 388-390, 2008

M. Debbichi, A. Ben Fredj, A. Bhouri, M. Saïd, J. Lazzari, Y. Cuminal, P. Christol, “Optical gain calculation of mid-infrared InAsN/GaSb quantim well laser for tunable absorption spectroscopy applications.” Mat Science Engineering C, 28, 751-754, 2008

N. Massegu, A. Konrath, J.M. Barois, P. Christol and E. Tournié. “S20 photocathodes grown by molecular beam deposition”, Electronic Letters, 44, 315-316, 2008

Y. Cuminal, J.B. Rodriguez and P. Christol, “Design of mid-infrared InAs/GaSb superlattice detectors for room temperature operation”, Finite Element in Analysis and Design, 44, 611-616, 2008

L. Konczewicz,S. Contreras,H. Aït-Kaci,Y. Cuminal,J.B. Rodriguez, P. Christol , “Effect of pressure on electrical properties of short period InAs/GaSb superlattice”, Physica Status Solidi B, 4, 1-5, 2008

M. Debbichi, A. Ben Fredj, Y. Cuminal, J.L Lazzari, S. Ridene, H. Bouchriha, M. Saïd and P. Christol, “InAsN/GaSb/InAsN W quantum-well laser for mid-infrared emission : from electronic structure to threshold current density calculations”, Journal of Physics D, 41, 215106-1, 215106-10, 2008

E. A. Grebenscikova, N. D. Il’inskaya, V. V. Sherstnev, A. A. Monakhov, A. P. Astakhova, Yu. P. Yakovlev, G. Boissier, R. Teissier, and A. N. Baranov, “Infrared whispering-gallery-mode lasers (l= 2.4 µm) with convex disk cavity operating at room temperature
Techn.”, Phys. Lett., 34(11) 918, 2008

A. Monakhov, V. V. Sherstnev, A. P. Astakhova, E. A. Grebenscikova, Yu. P. Yakovlev, G. Boissier, R. Teissier, and A. N. Baranov ” Experimental observation of whispering gallery modes lasers with cut disk cavities” Techn. Phys. Lett., 34(11) 941, 2008

E. Benveniste, A. Vasanelli, A. Delteil, J. Devenson, R. Teissier, A.N. Baranov, A.M. Andrews, G. Strasser, I. Sagnes, and C. Sirtori “Influence of material parameters on quantum cascade devices” Applied Physics Letters, 93, 131108, 2008

B. Cocquelin, G. Lucas-Leclin, P. Georges, I. Sagnes, A. Garnache, “Single-frequency tunable VECSEL around the Cesium D2 line”, Proc. SPIE, Photonics Europe 2008, Vol. 6871, paper 687112, 2008

S. Hoogland, A. Garnache, K. G. Wilcox, Z. Mihoubi, S. Elsmere, A. Quarterman and A.C. Tropper, “Spectrotemporal Gain Bandwidth Measurement in an InGaAs/GaAsP Quantum Well Vertical-External-Cavity-Surface-Emitting Semiconductor Laser”, Proc. IEEE CLEO 2008, vol.1-9, p.1812-1813, 2008

A. Garnache, M. Myara, A. Bouchier, J.P. Perez, P. Signoret, I. Sagnes, D. Romanini, “Single frequency free-runing low noise compact external-cavity VCSELs at high power level (50mW)”, Proc. IEEE 34th European Conference on Optical Communication, p1, 2008.

A.Ducanchez, L. Cerutti, A. Garnache and F.Genty, “Monolithic, Sb-based Electrically pumped VCSELs emitting at 2.3µm”, IEEE IPRM 2008, Paper WEP47, Versailles, France, 26-30 Mai, 2008

A.Ducanchez, L. Cerutti, A. Garnache and F.Genty, “Room Temperature, Sb-Based Monolithic EP-VCSEL at 2.3 µm Including 2 N-Type DBR”, IEEE Conference on Laser and Electro-Optics, Paper CTUZ6, San-José, USA, 5-9 Mai, 2008

A.Gassenq, L. Cerutti, A. Baranov, and E. Tournié, “MBE growth of mid-IR diode lasers based on InAs/GaSb/InSb short-period superlattice active zones”,Proc. inInternational Molecular Beam Epitaxy Conference (MBE international), Vancouver, Canada, 03-08 August, 2008

E. Luna, F. Ishikawa, B. Satpati, J.B. Rodriguez, E. Tournié and A. Trampert, “Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy.”,Proc. inInternational Molecular Beam Epitaxy Conference (MBE international), Vancouver, Canada, 03-08 August, 2008

A.Ducanchez, L. Cerutti, P.Grech and F.Genty, “GaSb-based microcavity EP-VCSEL emitting above 2.2µm in CW at RT” , IEEE International Semiconductor Laser Conference (ISLC) 2008, Paper TUA2, Sorrento, Italy, 14-18 Septembre 2008

D. Barat, A. Vicet, J. Angellier, Y. Rouillard, L. Le Gratiet, S. Guilet, A. Martinez, A. Ramdane, “Fabry-perot laser diodes and DFB laser diodes emitting at 2.6µm for absorption spectroscopy”, IPRM08, 25-29 may 2008, Versailles, France. ISBN 978-1-4244-2259-3, ISSN 1092-8669, 2008

M. Debbichi, S. Ridene, H. Bouchriha, A. Ben Fredj, M. Saïd, J.L. Lazzari, Y. Cuminal and P. Christol, “Dilute-Nitride “W” and “M” InAsN/GaSb laser diodes for gaz analysis in the mid-infrared domain “, MADICA 2008, Rabat-Maroc (october 2008)

H. Aït-Kaci, D. Boukredimi, M. Mebarki, R. Chaghi, P. Grech, Y. Cuminal, J.B. Rodriguez and P. Christol, “Surface treatments of Sb-based photodetectors”, MADICA 2008, Rabat-Maroc (october 2008).

R. Chaghi, Y. Cuminal, H. Aït-Kaci, J.B. Rodriguez, L. Konczewicz, P. Christol “Improvement performances of InAs/GaSb superlattice photodiode”Proc. inEXMATEC’08, Lodz (June 2008).

I. P. Marko, A. R. Adams, And S. J. Sweeney, R. Teissier, A. N. Baranov, and S. Tomi, “Indirect carrier leakage in short-wavelength InAs/AlSb quantum cascade lasers”,Proc. inIOMD IX, Freiburg, Germany, 7-11 September, 2008

A. P. Astakhova, A. A. Monakhov, V. V. Sherstnev, E. A. Grebenscikova, Yu. P. Yakovlev, G. Boissier, R. Teissier, and A. N. Baranov, “Experimental observation of whispering gallery modes in sector disk lasers”,Proc. inMIOMD IX, Freiburg, Germany, September, 2008

A. Gassenq, L. Cerutti, A.N. Baranov, and E. Tournié, “InAs/GaSb/InSb short-period superlattice diode lasers emitting near 3.3 µm at room temperature”,Proc. inMIOMD IX, Freiburg, Germany, 7-11 September, 2008

A.N. Titkov, A.V. Ankudinov, M.S. Dunaevskii, K. S. Ladutenko, V. P. Evtikvhiev, N. Deguffroy, A.N. Baranov, E. Tournié, B. Satpati, A. Trampert, “EFM/AFM studies of laser diodes for 2.6 – 3.5 µm range with InSb/InAs/GaSb superlattice in active area: design and principal properties”,Proc. inXII International Symposium on Nanophysics and Nanoelectronics, Nizhny Novgorod, Russia, 10 – 14 March, 2008

T. Daoud, G. Boissier, J. Devenson, G. Sabatini, L. Varani, A. Baranov, R. Teissier, “Conception and Fabrication of InAs-based Hot Electron Transistor”,Proc. inIPRM08 -20th Indium Phosphide and Related Materials Conference, 25-29 may 2008, Versailles, France, 2008

A. Faugeras, A. Leuliet, A. Vasanelli, C. Sirtori, A. Wade, G. Fedorov, D. Smirnov, R. Teissier, A. Baranov, D. Barate, J. Devenson, “Quantum efficiency of a 2-level InAs/AlSb quantum cascade structure”, 17th International Conference on High Magnetic Fields in Semiconductor Physics (HMF) Würzburg, Germany, 30 July – 4 August 2006, International Journal of Modern Physics B, Vol. 21, Nos. 8-9, 1471-1475, 2007

A. Anappara, D. Barate, A. Tredicucci, G. Biasiol, L. Sorba, J. Devenson, R. Teissier, A.N. Baranov, “Controlling Polariton Coupling in Intersubband Microcavities” ICPS 2006, Vienna, Austria, July 24-28 2006, AIP Conf. Proc. 893, 523, 2007.

R. Teissier, J. Devenson, O. Cathabard, A.N. Baranov, “Single Mode Quantum Cascade Lasers emitting at 3.3um”, International Quantum Cascade Lasers School & Workshop (IQCLSW), Monte Verita, Suisse, 14-19 Septembre 2008

A. Garnache, M. Myara, A. Laurain, A. Bouchier, J.-P. Perez, P. Signoret, I. Sagnes, and D. Romanini, “Single frequency Free Running low noise compact extended cavity semiconductor laser at high power level”, International Conference on Space Optics (ICSO)Toulouse, october 2008

M. Myara ,A. Garnache , A. Bouchier, J.-P. Perez , P. Signoret, “Extended-cavity semiconductor laser at high power level”, UPoN conference 2008, Lyon, June 2008

A. Garnache, M. Myara, A. Laurain, A. Bouchier, J.-P. Perez, P. Signoret, I, Sagnes, and D. Romanini, “Free running low noise kHz-Linewidth compact External-Cavity VCSELs operating at high power level (50mW)”, 3rd EPS-QEOD EUROPHOTON CONFERENCE, Paris, September, 2008

B. Satpati, E. Luna, A. Trampert, N. Deguffroy, V. Tasco, A.N. Baranov, and E. Tournié, “Strain relaxation mechanism in the MBE grown InSb/GaSb material system”, International Symposium on Compound Semiconductors 2008, (ISCS2008), Rust, Germany, 21 – 24 September 2008

A. Garnache, M. Myara, L. Cerutti, A. Ouvrard, J.-P. Perez, A. Ducanchez, A. Laurain, A. Bouchier, and P. Signoret, “Single-frequency low-noise broadly-tunable extended-cavity VCSEL for gas analysis in the MIR”, Mid Infrared and Optical Material Devices (MIOMD), Paper 82, Freiburg, Germany. 7-11 September 2008.

Souad Moumdji, Sophie Bonnefont, Olivier Gauthier-Lafaye1, Françoise Lozes-Dupuy, Aurore Vicet, Yves Rouillard, “GaSb coupled cavities laser diodes with a photonic crystal intra-cavity mirror”, Nanoswec, Bordeaux (ENSCPB) November 3rd-5th, 2008.

A.G. Senkov, V.A. Firago, V.K. Kononenko and P. Christol, “Application of laser diodes and photodetectors on multiple-quantum wells at the hot-metal pyrometry”, Metrology Congress, Cracovie, Polish Journal on Electronics “Measurements, Automatics, Control” 53, n°9, 597-600, 2008.

A. Ducanchez, L. Cerutti, P. Grech, et F Genty, « Réalisation de lasers VCSELs pompés électriquement émettant au dessus de 2.2µm en régime continu à température ambiante », 12èmes Journées Nano et Micro-électronique et Optoélectronique, Oléron, 4-6 Juin 2008

A. Laurain, L. Cerutti, I. Sagnes, M.Myara, et A.Garnache, « Méthodes de caractérisation optique de structures VCSELs à fort gain pour le moyen-IR », 12èmes Journées Nano et Micro-électronique et Optoélectronique, Oléron, 4-6 Juin 2008

J.-P. Perez, A. Ducanchez, L. Cerutti, A. Laurain, et A. Garnache, « Technologies associées à la réalisation de laser Sb-Vcsel de puissance pour le moyen IR », 12èmes Journées Nano et Micro-électronique et Optoélectronique, Oléron, 4-6 Juin 2008

Souad Moumdji, Olivier Gauthier Lafaye, Sophie Bonnefont, Françoise Lozes-Dupuy, Aurore Vicet, Yves Rouillard, « Diodes laser GaSb à cavités couplées par cristaux photoniques », 12èmes Journées Nano et Micro-électronique et Optoélectronique, Oléron, 4-6 Juin 2008

N. Deguffroy, A.N. Baranov, E. Tournié, B. Satpati, E. Luna, A. Trampert, « Epitaxie par jets moléculaires de boîtes quantiques InSb », 12èmes Journées Nano et Micro-électronique et Optoélectronique, Oléron, 4-6 Juin 2008

A. Gassenq, L. Cerutti, A.N. Baranov, E. Tournié, « Nouveau laser moyen infra-rouge à super-réseaux InAs/GaSb pour une émission entre 3 et 4 µm », 12èmes Journées Nano et Micro-électronique et Optoélectronique, Oléron, 4-6 Juin 2008

R. Teissier, « Physique et matériaux des lasers à cascade quantique de courte longueur d’onde », MC6O4 – 11èmes Journées de la Matière Condensée, Strasbourg, 29 août 2008