NanoMIR

PUBLICATIONS NANOMIR 2010

P. Christol, C. Cervera, R. Chaghi, H. Aït-kaci, J.B. Rodriguez, L. Konczewicz, S. Contreras, K. Jaworowicz, I. Ribet-Mohamed, “Electronic Properties of InAs/GaSb Superlattice Detectors to Evaluate High Temperature Operation.”, Photonic West SPIE Conference, San-Francisco, January 2010. Proceedings of SPIE 7608, 76081U (2010).

J.B. Rodriguez, L. Cerutti, P. Grech, G. Boissier, G. Narcy and E. Tournié, “Sb-based laser sources grown by molecular beam epitaxy on silicon substrates”, Photonics West 2010, Novel In-Plane Semiconductor

Lasers IX, San Francisco. Proceedings of SPIE Volume: 7616 (2010).

A.N. Baranov, R. Teissier, J. Devenson, O. Cathabard, “Progress inf InAs-based Quantum Cascade Lasers”, Photonic West SPIE Conference, San-Francisco, January 2010.

A.N. Baranov, R. Teissier, J. Devenson, O. Cathabard, “Antimonides – alternative materials for quantum cascade lasers”, MIRSENS 2010, 6-8 may 2010, Wroclaw, Poland.

Y. Rouillard, S. Belahsene, G. Boissier, P. Grech, G. Narcy, and A. Vicet, “Incursion into the 3-4 µm range with quantum well lasers”, MIRSENS 2010, 6-8 may 2010, Wroclaw, Poland.

L. Hilico, E. Tournié, A. Besse, A. Orgongozo, “A Faraday Optical Isolator in the 9-10 µm range for Quantum Cascade Laser applications”, Physique Atomique, Moléculaire et Optique, 29 juin – 2 juillet 2010, Ors.

R. Teissier, O. Cathabard, J. Devenson, J.C. Moreno and A.N. Baranov, “Progress and prospects of InAs-based Quantum Cascade Lasers”, 15th International Conference “Laser Optics 2010”, St.Petersburg, Russia, July 2 – 7, 2010.

R. Teissier, J.C. Moreno, and A. N. Baranov, “InAs/AlSb Quantum Cascade Lasers”, International Quantum Cascade Lasers School & Workshop, Florence, Italy, August 30 – September 03, 2010.

R. Teissier, H. Nguyen Van, J.-C. Moreno, A. Baranov, G. Sabatini, L. Varani, “Le QHET, transistor à électrons chauds à base d’InAs : vers un transport vertical résonant ultra-rapide”, 13ème Journées Nano, Micro et Optoélectronique, Les Issambres, 28 sept. – 1er oct. 2010.

A. Garnache, A. Laurain, M. Myara, J-.P. Perez, L. Cerutti, A. Michon, G. Beaudoin, I. Sagnes, P. Cermak and D. Romanini, “Laser à Semiconducteur Monofréquence de forte Puissance et de Haute Cohérence pour Applications Photoniques”, JNMO 2010.

P. Christol, “New generation of photovoltaïc systems using Antimonide-based structures”, Symposium JFFoE (Japan-France Frontiers of Engineering)”, Grenoble, octobre 2010.

P. Christol, “Les filières de photodétecteurs pour les prochaines applications de l’imagerie infrarouge”, Journées “Imagerie infrarouge thermique jusqu’au millimétrique”, Paris, décembre 2010.

S. Belahsene, L. Naehle, M. Fischer, J. Koeth, G. Boissier, P. Grech, G. Narcy, A. Vicet, and Y. Rouillard, “Laser Diodes for Gas Sensing Emitting at 3.06 µm at Room Temperature”, IEEE Phot. Technol. Letters, 22 (15), 1084 (2010).

O. Cathabard, R. Teissier, J. Devenson, JC. Moreno, A.N. Baranov, “Quantum cascade lasers emitting near 2.6 µm”, Appl. Phys. Lett. 96, 141110, (2010).

A. Khoshakhlagh, F. Jaeckel, C. Hains, J. B. Rodriguez, L. R. Dawson, K. Malloy, and S. Krishna, “Background carrier concentration in midwave and longwave InAs/GaSb type II superlattices on GaAs substrate”, Appl. Phys. Lett. 97, 051109 (2010).

E. Plis, J.B. Rodriguez, G. Balakrishnan, YD Sharma, HS Kim HS, T. Rotter, S. Krishna “Mid-infrared InAs/GaSb strained layer superlattice detectors with nBn design grown on a GaAs substrate”, Semiconductor Science and Technology, 25 (8), 085010 (2010).

JB Rodriguez, C. Cervera, P. Christol, “A type-II superlattice period with a modified InAs to GaSb thickness ratio for midwavelength infrared photodiode performance improvement”, Appl. Phys. Lett. 97, 251113 (2010).

S. Ben Rejeb, M. Debbichi, M. Said, A. Gassenq, E. Tournié and P.Christol, “Optical performances of InAs/Gasb/InSb short-period superlattice laser diode for mid-infrared emission”, J. Appl. Phys. 108, 093107 (2010).

S. Ben Rejeb, M. Debbichi, M. Said, A. Gassenq, E. Tournié and P.Christol, “Modelling of InAs/Gasb/InSb short-period superlattice laser diode for mid-infrared emission by k.p.method”, J. of Phys. D – Applied Physics 43, 325102-1 (2010).

J. Léon, T. Taliercio, “Large tunable photonic band gaps in nanostructured doped semiconductors”, Phys. Rev. B 82, 195301 (2010).

J-P. Perez, A. Laurain, L. Cerutti, I. Sagnes, A. Granache, “Technologies for thermal management of mid-IR Sb-based surface emitting lasers”, Semicond. Sci. Technol. 25, 045021 (2010).

G. Sęk, M. Motyka, K. Ryczko, F. Janiak, J. Misiewicz, S. Belahsene, G. Boissier and Y. Rouillard, “Band Offsets and Photoluminescence Thermal Quenching in Mid-Infrared Emitting GaInAsSb Quantum Wells with Quinary AlGaInAsSb Barriers”, Jpn. J. Appl. Phys. 49, 031202 (2010).

L. Cerutti, J.B. Rodriguez, E. Tournié , “GaSb-Based Laser, Monolithically Grown on Silicon Substrate, Emitting at 1.55 µm at Room Temperature”, IEEE Photonics Technology Letters, 22 (8), 553-555, 2010.

E. Luna, B. Satpati, J. B. Rodriguez, A. N. Baranov, E. Tournié, and A. Trampert , “Interfacial intermixing in InAs/GaSb short-period-superlattices grownby molecular beam epitaxy”, Appl. Phys. Lett. 96, 021904, 2010.

A. N. Imenkov, v. V. Sherstnev, a. M. Monakhov, e. A.grebenshchikova, a. S. Golovin, m. A. Sipovskaya, d. A. Starostenko, m. I. Larchenkov, s. I. Troshkov, d. I. Tarasov, a. N. Baranov, and yu. P. Yakovlev, “Interference of emission from disk shaped lasers based on quantum confined AlGaAsSb/InGaAsSb nanoheterostructures”, Techn. Phys. Lett. 36(7) 626, (2010).

V. V. Sherstnev, A. N. Imenkov, A. P. Astakhova, E. A. Grebenshchikova, S. S. Kizhaev, M. A. Sipovskaya, A. N. Baranov, and Yu. P. Yakovlev, “Frequency tuning due to nonlinear effects in whispering gallery mode laser based on InAsSb/InAsSbP heterostructure”, Techn. Phys. Lett. 36(4) 351, (2010).

P.Cermak, M.Triki, A.Garnache, L.Cerutti, and D.Romanini, “Optical-feedback cavity-enhanced absorption spectroscopy using a short cavity vertical external cavity surface emitting laser”, IEEE Photon. Technol. Lett. 22 (21), 1607-1609 (2010).

A. Laurain, M. Myara, G. Beaudoin, I. Sagnes, and A. Garnache, “Multiwatt-power highly-coherent compact single-frequency tunable Vertical-External-Cavity-Surface-Emitting-Semiconductor-Laser”, Opt. Express 18, 14627 (2010).

M. E. Barnes, Z. Mihoubi, K. G. Wilcox, A. H. Quarterman, I. Farrer, D. A. Ritchie, A. Garnache, S. Hoogland, V. Apostolopoulos, A. C. Tropper , “Gain bandwidth characterization of surface-emitting quantum well laser gain structures for femtosecond operation”, Optics Express 18 21330 (2010).

O. Pagès, A.V. Postnikov, A. Chafi, D. Bormann, P. Simon, F. Glas, F. Firszt, W. Pazkowicz, and E. Tournié, “Non-random Be-to-Zn substitution in ZnBeSe alloys : Raman scattering and ab initio calculations”, Euro. Phys. J. B 73, 461 – 469 (2010).

T. Taliercio, A. Gassenq, E. Luna, A. Trampert, and E. Tournié , “Highly tensile strained, type II, Ga1-xInxAs/GaSb quantum wells”, Appl. Phys. Lett. 96, 062109 (2010).

S. Moumdji, A. Larrue, D. Belharet, P.Dubreuil, S. Bonnefont , O. Gauthier-Lafaye, Y. Rouillard, A. Vicet, “GaSb-based photonic crystal coupled cavity lasers above 2.3 µm”, SPIE Photonics Europe, 12-16 avril 2010, Bruxelles ISBN 9780819481863, SPIE vol 7713.

A. Laurain, M. Myara, I. Sagnes, G. Beaudoin, A. Garnache, “Narrow-linewidth low-noise multiwatt power operation of tunable compact”, external-cavity VCSEL Proc EPS-QEOD Europhoton, 2010 paper ThD5.

S. Moumdji, A. Larrue, D. Belharet, P.Dubreuil, S. Bonnefont , O. Gauthier-Lafaye, Y. Rouillard and A. Vicet, “GaSb-based photonic crystal coupled cavity lasers above 2.3 µm”, SPIE Photonics Europe, 12-16 avril 2010, Bruxelles, Proc. SPIE Vol. 7713, 77130X (May. 13, 2010), ISBN 9780819481863.

A. Hamdi, N Yacoubi, F Genty, Y Rouillard and A Vicet , “Paraffin oil thermal diffusivity determination using a photothermal deflection setup with a 2.3μm pump: a first step towards methane detection”, J. of Physics : Conference Series 214, 2010. doi: 10.1088/1742-6596/214/1/012121.

A. Le Bris, J-F. Guillemoles, L. Lombez, D. Lincot, G. Boissier, P. Christol, J.J. Greffet, M. Laroche, R. Esteban, J.L. Pelouard, S. Collin , I. Gérard, P. Tran Van, A. Etcheberry , “Hot carrier solar cells: in the making?”, 25th EPVSEC Valence, September 2010, Conference Proceedings 1DV-3.57.

C. Cervera, K. Jaworowicz, H. Aït-Kaci, R. Chaghi, J.B. Rodriguez, I. Ribet-Mohamed, P. Christol, “Temperature dependence performances of InAs/GaSb superlattice photodiode”, QSIP International Conference, Istanbul, July 2010.

K. Jaworowicz, C. Cervera, O. Gravrand, JB Rodriguez, P. Christol and I. Ribet-Mohamed , “Dark Current and noise measurements in InAs/GaSb Superlattice Detectors”, Photonic West SPIE Conference, San-Francisco, January 2010. Proceedings of the SPIE “Quantum Sensing and Nanophotonic Devices VII”, 7608, 76081T (2010).

M. Jahjah, B. Cousin, Y. El Kaim, Y. Rouillard B. Jaillard and A. Vicet, “Study and development of a multi-species buried probe for gas spectroscopy with bidirectional antimonide- based laser diodes”, MIRSENS 2010, 6-8 may 2010, Wroclaw, Poland

S. Belahsene, G. Boissier, P. Grech, G. Narcy, A. Vicet and Y. Rouillard, “GaInAsSb/AlGaInAsSb quantum well lasers for emission at 3.0 µm”, MIRSENS 2010, 6-8 may 2010, Wroclaw, Poland.

L. Cerutti, J.B. Rodriguez, and E. Tournié, “GaSb based,1.55 µm laser monolithically integrated on Silicon substrates operating at room temperature”, 22nd Int. Conf. on InP and Related Materials (IPRM 2010), 31 May – 4 June 2010, Takamatsu (Japan).

T. Taliercio, A. Gassenq, E. Luna, A. Trampert, and E. Tournié, “Highly Tensile-Strained Ga0.5In0.5As/GaSb Heterostructures”, 37th International Symposium on Compound Semiconductors (ISCS2010), 31 May – 4 June 2010, Takamatsu (Japan).

J-F. Guillemoles, A. Le Bris, M. Paire, L. Lombez, S. Laribi, G. Boissier, P. Christol, S. Collin, JL Pelouard, D. Lincot, “High efficiency solar cells of 3rd generation: managing high injection and charge collection”, 2010 International Electron Devices and Materials Symposium (IEDMS 2010), Taiwan, Nov 2010.

S. Ben Rejeb, M. Debbichi, M. Said, A. Gassenq, E. Tournié and P.Christol, “Interfaces as design tools for InAs/Gasb/InSb short-period superlattice for mid-infrared emission”, Conference MADICA 2010 Tabarka (Tunisie), october 2010

C. Cervera, J.B. Rodriguez, H. Aït-Kaci, H. Montes, P. Christol, K. Jaworowicz, I. Ribet-Mohamed, “Improvement of MWIR SL Photodiode using an asymmetrical period design”,Proc. in10th Int. Mid-IR Optoelectronics-Materials & Devices Conference (MIOMD X), Shanghai, Sept 2010.

J.P. Perez, J.B. Rodriguez, R. Chaghi, P. Christol. F. Fagnou, H. Sik, “Molecular beam epitaxy of InSb involving hydrogene plasma substrate cleaning”, 16th International Conference on Molecular Beam Epitaxy, Berlin, August 2010.

A. Gassenq, L. Cerutti, E. Tournié , “Growth optimization of InAs/GaSb/InSb short-period super-lattices as active regions of mid-IR lasers”, 16th Int. Conf. on Molecular-Beam Epitaxy (MBE16), 22 – 27 August 2010, Berlin (Germany): oral.

A. Gassenq, E. Luna, T. Taliercio, A. Trampert, E. Tournié , “MBE growth of highly tensile strained Ga(In)As/GaSb quantum wells”, 16th Int. Conf. on Molecular-Beam Epitaxy (MBE16), 22 – 27 August 2010, Berlin (Germany): oral.

R. Chaghi, C. Cervera, F. Fagnou, J.B. Rodriguez, P. Christol, H. Sik , “Surface treatments of Sb-based materials for infrared photodetectors”, MOLMAT 2010 Conference, Montpellier, July 2010.

S. Ben Rejeb, M. Debbichi, M. Saîd, A. Gassenq, E. Tournié, P. Christol , “Effect of asymmetric interface profile on the electronic properties of InAs/GaSb/InSb short-period superlattice structures”, International Conference on Nano-Materials and Renewable Energie, Safi-Marroco, July 2010.

Y. Cuminal, N. Cammalleri, J.B. Rodriguez, P. Christol, A. Foucaran, A. Dollet, A. Perona, L. Pujol , “GaSb based solar cells designed for high solar concentration”, Thin films 2010 international conference, Aix en Provence, July 2010.

L. Konczewicz, S. Contreras, M. Baj, C. Cervera, J.P. Perez, R. Chaghi, J.B. Rodriguez, P. Christol, “Residual carrier concentration in InAs/GaSb superlattice structures to define optimized midwave infrared photodiode”, Exmatec Conference, Darmstadt, May, 2010.

S. Belahsene, L. Naehle, M.v. Edlinger, M. Fischer, J. Koeth, G. Boissier, P. Grech, G. Narcy and Y. Rouillard, “Type I quantum well Laser Diodes for Gas Sensing Emitting at 3.3 µm at Room Temperature”,Proc. in10th MIOMD Conference, Sept 2010, Shanghai, China.

Laurent Cerutti, Jean-Rémy Reboul, Jean-Baptiste Rodriguez, Eric Tournié, “Sb-based lasers grown on highly mismatched substrates”,Proc. inMid-Infrared Optoelectronics: Materials and Devices (MIOMD X), September 2010, Shanghai, China.

I. P. Marko, A.M. Aldukhayel, A. R. Adams and S. J. Sweenee, R. Teissier, A. N. Baranov, and S. Tomić, “High temperature limitations of short wavelength InAs/AlSb-based quantum cascade lasers”,Proc. inMid-Infrared Optoelectronics: Materials and Devices (MIOMD X), September 2010, Shanghai, China.

A.M. Monakhov, A. N. Imenkov, V. V. Sherstnev, E. A. Grebentsikova, Yu. P. Yakovlev, G. Boissier, R. Teissier, and A.N. Baranov, “Tunable whispering gallery mode lasers for mid IR”,Proc. inMid-Infrared Optoelectronics: Materials and Devices (MIOMD X), September 2010, Shanghai, China.

J.C. Moreno, R. Teissier, and A.N. Baranov, “InAs/AlSb quantum cascade lasers: towards shorter wavelengths and higher operation temperatures”,Proc. inMid-Infrared Optoelectronics: Materials and Devices (MIOMD X), September 2010, Shanghai, China.

V. V. Sherstnev, A.M. Monakhov, E. A. Grebentsikova, A. N. Imenkov, A.N. Baranov, and Yu. P. Yakovlev, “Tunable mid-infrered whispering gallery mode lasers”,Proc. inMid-Infrared Optoelectronics: Materials and Devices (MIOMD X), Sept 2010, Shanghai, China.

A. Delteil, A. Vasanelli, D. Barate, P. Jouy, J. Devenson, R. Teissier, A.N. Baranov and C. Sirtori, “LO-phonon scattering of cavity polaritons in an electroluminescent device”, CLEO 2010, San Jose, USA, 4-9 May, 2010.

M.S.Kagan, I.V. Altukhov, A.N. Baranov, N.D. Il’inskaya, S.K. PaProtskiy, V.P. Sinis and A.A. Usikova, “Vertical transport in InAs/AlSb superlattices” ,Proc. in18th Int. Symposyum “Nanostructures: Physics and Technology”, St Petersbourg, Russia, 21-26 June, 2010.

M.S.Kagan, I.V. Altukhov, A.N. Baranov, N.D. Il’inskaya, S.K. PaProtskiy, V.P. Sinis, R. Teissier and A.A. Usikova, “Negative differential conductivity in InAs/AlSb superlattices”, 14th International Symposium on Ultrafast Phenomena in Semiconductor, Vilnius, Lithuania,23-25 August 2010.

C. Gatel, B. Warot-Fonrose, C. Magen, R. Ibarra, R. Teissier, A.N. Baranov and A. Ponchet, “Strain state and chemical arrangement at interfaces of InAs/AlSb quantum wells”, IMC 17, Rio de Janeiro, Brazil, 19-24 September, 2010.

J.P. Perez, A. Laurain, L.Cerutti, I. Sagnes, A. Garnache, “Thermal management of mid-IR Sb-Based surface emitting lasers”, Exmatec 2010, Darmstadt, Allemagne, may 2010.

A. Laurain, M. Myara, I. Sagnes, G. Beaudoin, A. Garnache, “Narrow-linewidth low-noise multiwatt power operation of tunable compact external-cavity VCSEL”, EPS-QEOD Europhoton, (2010), paper ThD5.

T. Taliercio, E. Luna, A. Gassenq, A. Trampert, and E. Tournié, “Tensile-Strained Ga1-xInxAs / GaSb Heterostructures for Mid-IR Applications”,Proc. in10th Mid-Infrared Optcal Materials and Devices International Conference (MIOMD-10), 5 – 9 September 2010, Shanghai (China): oral.

N. Hattasan, L. Cerutti, J.B. Rodriguez, E. Tournié, D. Van Thourhout, G. Roelkens, “Heterogeneous Integration of GaSb-based epitaxy on silicon-on-insulator: towards mid-infrared photonic integrated circuits for environmental and bio-medical applications”,Proc. in10th MIOMD conference, 5 – 9 September 2010, Shanghai (China): oral.

A. Gassenq, L. Cerutti, E. Tournié, “Laser emission in the 3 – 3.5 µm wavelength range with InAs/GaSb/InSb short-period super-lattice active regions”,Proc. in10th MIOMD Conference, 5 – 9 September 2010, Shanghai (China): poster.

C. Cervera, J.B. Rodriguez, P. Christol, L. Konczewicz, S. Contreras, K. Jaworowicz, I. Ribet-Mohamed, “Propriétés électriques de photodiodes infrarouges à superréseaux InAs/GaSb”, XIIIème Journées Nationales Microélectronique Optoélectronique (JNMO), Les Issambres, Sept 2010.

JB Rodriguez, JR Reboul, L. Cerutti, E. Tournié, “Lasers moyen-infrarouge à base d’antimoine réalisés sur substrat Silicium”, 13ème Journées Nano, Micro et Optoélectronique (JNMO 2010), France.

S. Belahsene, L. Naehle, M. Fischer, J. Koeth, G. Boissier, P. Grech, G. Narcy and Y. Rouillard, “Diodes Laser à puits quantiques de Type I pour Analyse de Gaz Emettant à 3,3 µm à Température Ambiante”, 13th JNMO Conference, 28th September-1st October 2010, Les Issambres, France.

A. Gassenq, L. Cerutti, E. Tournié, “Laser moyen infra-rouge à base de super-réseau à courte période InAs/GaSb/InSb pour émission 3–3.5 µm”, 13th Journées Nationales Micro-Nano-Opto-électronique (JNMO), 29 Sept – 1 Oct. 2010, Les Issambres (F), poster.

D.Sanchez, L.Cerutti, E.Tournié, “Développements technologiques pour VCSELs émettant dans le Moyen Infra Rouge”, 13th Journées Nationales Micro-Nano-Opto-électronique (JNMO), 29 Sept – 1 Oct. 2010, Les Issambres (F), poster.

JR. Reboul, L. Cerutti, JB. Rodriguez, E. Tournié, “Lasers antimoniures émettant à 1.55 µm sur substrat silicium”, 13th Journées Nationales Micro-Nano-Opto-électronique (JNMO), 29 Sept – 1 Oct. 2010, Les Issambres (F), poster.

A. Laurain, M. Myara, I. Sagnes, A. Garnache, “Bruit d’intensité et de fréquence dans les VCSELs de forte puissance et de haute cohérence”, Journées du Club Opto Micro-Ondes – 2 Juin 2010, Toulouse.

A. Laurain, M. Myara, I. Sagnes, A. Garnache, “Lasers à semi-conducteur à bas bruit d’intensité et de fréquence : Les VCSELs en cavité externe”, Colloque commun de la division Physique Atomique, Molécuaire et Optique – 20 Juin 2010 Paris-Orsay, France.

A. Laurain, M. Myara, I. Sagnes, A. Garnache, “Lasers à semi-conducteur à bas bruit d’intensité et de fréquence : Les VCSELs en cavité externe”, Colloque commun de la division Physique Atomique, Molécuaire et Optique – 20 Juin 2010 Paris-Orsay, France.