In our on-going effort to integrate mid-IR optoelectronic devices with Si platforms, we have recently demonstrated room-temperature operation of a quantum-cascade laser (QCL) grown on a Si substrate. The QCL was designed to emit near 11 µm, a wavelength of interest for gas sensing. The substrate was a 6°-off (001) Si prepared according to the process previously developed in the group. More details to be found in the original publication. DOI:10.1038/s41598-018-24723-2.

Quantum Cascade Laser with an InAs/AlSb active zone

 

L-I-V curves taken at different temperatures
for a QCL grown on Si