A. Gassenq, L. Cerutti, A.N. Baranov, and E. Tournié, “MBE growth of mid-IR diode lasers based on InAs/GaSb/InSb short-period superlattice active zones”, 15th International Conference on Molecular-Beam Epitaxy (MBE-15), 3–8 August 2008, Vancouver (Canada): oral, J. Cryst. Growth 311, 1905 (2009).
E. Luna, F. Ishikawa, B. Satpati, J.B. Rodriguez, E. Tournié and A. Trampert, “Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy”, 15th International Conference on Molecular-Beam Epitaxy (MBE-15), 3 – 8 August 2008, Vancouver (Canada): oral, J. Cryst. Growth 311, 1739 (2009).
C. Cervera, J. P. Perez, R Chaghi, J. B. Rodriguez, P. Christol, L. Konczewicz, S. Contreras, “Transport measurements on InAs/GaSb superlattice structures for mid-infrared photodiode”, J. Phys.: Conf. Ser. 193 012030 (2009).
L. Konczewicz, S. Contreras, H. Aït-Kaci, Y. Cuminal, J.B. Rodriguez and P. Christol, “Effect of pressure on electrical properties of short period InAs/GaSb superlattice.”, 13th International Conference on High Pressure Semiconductor Physics (HPSP 13), Fortaleza (Brazil), July 2008. Physica Status Solidi B 246, 643-647 (2009).
M. Bardoux, A. Bousseksou, G. Tessier, S. Bouchoule, D. Fournier, A. Salhi, Y. Rouillard and F. Genty, “Thermoreflectance imaging of laser diodes and VCSELs along and perpendicular to the emission direction”, Workshop on Optical Measurement Techniques for Structures and Systems, Leuven, Belgium, May 2007. Optics and Lasers in Engineering, 47, 473 (2009)
Thibaut Daoud, Guilhem Boissier, Jan Devenson, Alexei N. Baranov and Roland Teissier, “Experimental study of transport in InAs Quantum Hot Electron Transistor”, J. Phys.: Conf. Ser. 193 (2009) 012014.
B. Ortaç, M. Baumgartl, O. Schmidt, A. Hideur, I. Sagnes, A. Garnache, J. Limpert , and A. Tünnermann, “Energy scaling of femtosecond and picosecond fiber oscillators beyond the microjoule level”, Proc. IEEE CLEO Europe/IQEC 2009 (Munich, DE).
A. Laurain, M. Myara, A. Garnache, I. Sagnes, G.Beaudoin, “High power Single–Frequency continuously tunable compact extended–cavity semiconductor laser”, Proc. IEEE CLEO Europe/EQEC 2009 (Munich, DE). Paper CB12.6 THU.
B. Ortaç, M. Baumgartl, O. Schmidt, A. Hideur, I. Sagnes, A. Garnache, J. Limpert , and A. Tünnermann, “Energy scaling of femtosecond and picosecond fiber oscillators beyond the microjoule level”, Proc. SPIE Photonics West 2009, San Rose (2009), paper 7195-40.
A. Laurain, A. Garnache, M. Myara, L. Cerutti, J.-P. Perez, P. Signoret, M. Triki, P. Cermak, D. Romanini, I. Sagnes, G. Beaudoin, “Single-Frequency Broadly-Tunable Compact Extended-Cavity Disc Laser at High Power Level”, Proc EOS Topical Meeting on Lasers, 2009 paper 2185.
B. Satpati, V. Tasco, N. Deguffroy, A.N. Baranov, E. Tournié, and A. Trampert, “Structural properties and strain relaxation mechanisms of MBE grown InSb quantum dots on GaSb substrates”, 2nd Int. Conference on Physics at Surfaces and Interfaces (PSI2009), Puri, India, 23 – 27 February 2009 (oral).
E. Luna, B. Satpati, B.H. Hong, S.I. Rybchenko, J.B. Rodriguez, A.N. Baranov, E. Tournié and A.Trampert, “Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular-beam-epitaxy”, 15th European Workshop on Molecular-Beam Epitaxy (Euro-MBE 15), Zakopane Poland, 8 – 11 mars 2009 (oral).
JB Rodriguez , L.Cerutti, and E. Tournié, “Mid-IR GaSb-based lasers on highly mismatched GaAs and Si substrates”, Proc. in Workshop on Compound Semiconductor Devices and integrated Circuits (WOCSDICE 2009), may 2009, Malaga, (Spain): oral.
J.B. Rodriguez, L. Cerutti and E. Tournié, “Demonstration of laser operation at room-temperature of an Sb-based mid-infrared multi-quantum-well structure monolithically grown on a Silicon substrate”, Conference on Lasers and Electro-Optics (CLEO 2009), 31 May – 5 June 2009, Baltimore (U.S.A): Late news paper (oral).
L. Cerutti, JB. Rodriguez, P.Grech and E.Tournié, “Room Temperature, Continuous Wave Operation of an Sb-Based Laser Grown on GaAs Substrate”, Conference on Lasers and Electro-Optics (CLEO 2009), 31 May – 5 June 2009, Baltimore (U.S.A): oral.
A. Ducanchez, L. Cerutti, P. Grech, F. Genty, and E. Tournié, “GaSb-based mid-IR electrically-pumped VCSELs covering the wavelength range from 2.3 to 2.7 µm”, Conference on Lasers and Electro-Optics (CLEO Europe 2009), 14 – 19 June 2009, Munich (Germany): oral.
J.B. Rodriguez, L. Cerutti and E. Tournié, “Mid-IR Sb-based lasers grown on highly mismatched GaAs and Si substrates”, 36th Int. Symp. on Compound Semiconductors 2009, (ISCS2009), 30 August – 2 September 2009, Santa Barbara (USA): oral.
A. Gassenq, T. Taliercio, A.N. Baranov, E. Luna, A. Trampert, E. Tournié, “Investigations of tensile-strained Ga(In)As/GaSb nanostructures”, 36th Int. Symp. on Compound Semiconductors 2009, (ISCS2009), 30 August–2 Sept 2009, Santa Barbara (USA): poster.
E. Luna, Y. Rouillard, L. Cerutti, E. Tournié, A. Trampert, “Interface stability of metastable quaternary (Ga,In)(As,Sb) quantum wells”, 36th Int. Symp. on Compound Semiconductors 2009, (ISCS2009), 30 August – 2 Sept 2009, Santa Barbara (USA): oral.
L. Cerutti, J.B. Rodriguez, and E.Tournié, “GaSb based, 1.55 µm laser monolithically integrated on Silicon substrate operating at room temperature”, IEEE Indium Phosphide and Related Materials (IPRM) 2010, 31 may – 4 June 2010 , Kagawa (Japan): oral.
S. Moumdji, A. Larrue, D. Belharet, P. Dubreuil, S. Bonnefont, O. Gauthier-Lafaye, Y. Rouillard, A. Vicet, “Continuous-wave single-mode GaInAsSb/GaSb photonic crystal coupled cavity lasers emitting at 2.6 µm”, ESLW2009 – Austria European Semiconductor Laser Workshop, 25-26 September 2009, Vienna University ofTechnology, Austria.
A. Hamdi, F. Genty, N. Yacoubi,Y. Rouillard and. A. Vicet, “Application of mirage effect to methane detection at 2.3µm”, ICPPP15 – Leuven, Belgium from 19 to 23 July 2009.
A.Vicet, B. Cousin, Y. El Kaim, Y. Rouillard and B. Jaillard, “Developpement of a multi-species probe around 2.6 µm with a bi-directional antimonide-based laser diode”, TDLS 13-17 juillet 2009, Zermatt.
M. Jahjah, A. Hamdi, G. Boissier and A. Vicet, “First evaluation of quartz enhanced photoacoustic spectroscopy with a gasb based laser diode, emitting at 2.3µm”. TDLS 13-17 juillet 2009, Zermatt.
A. Le Bris, J.F. Guillemoles, P. Christol, G. Boissier, F. Pellé, P. Aschehoug, S. Ivanova, “Characterization of materials for hot carrier solar cells application by continuous wave PL experiments”, 2009 MRS Fall Meeting, Boston, December 2009 (oral)
R. Chaghi, C. Cervera, J.B. Rodriguez, P. Christol, H. Aït-Kaci, D. Boukredimi, M. Mebarki, “Surface treatment of antimonide-based materials by electrochemical process”, 2nd International Workshop on Chemistry and Applications (CIC2), Batna, Algérie, November 2009 (oral).
V.K. Kononenko, V.A. Firago, D.V. Ushakov, Y. Cuminal and P. Christol, “Spectral characteristics of the photosensitive and light emitting short-period superlattices in the InAs-GaSb system”, Workshop “Frontiers of nanoscale spintronics and photovoltaic, Marseille, November 2009.
R. Chaghi, C. Cervera, H. Aït-Kaci, P. Grech, Y. Cuminal, J.B. Rodriguez and P. Christol, “New chemical etching procedures of antimonide-based materials for infrared detectors”, 2d International Meeting on Materials for Electronic Applications, Hammamet-Tunisie, May 2009 (oral).
A. Le Bris, J.J. Greffet, P. Christol, G. Boissier, S. Ivanova, P. Aschehoug, J.F. Guillemoles, “Hot carrier solar cells efficiency simulation with partial thermalization”, 24th EPVSEC, Hamburg, September 2009.
M. Debbichi, S. Ridene, A. Ben Fredj, M. Saïd, H. Bouchriha, J.-L. Lazzari,Y. Cuminal, P. Christol, “Optical gain calculation of dilute Nitride InAsN/GaSb laser diodes operating in the mid-infrared”, EMRS Int. Conference, Spring Meeting, Strasbourg, June 2009.
R. Teissier, O. Cathabard, J. Devenson, A.N. Baranov, “Continuous wave operation of InAs/AlSb quantum cascade lasers”, ITQW 2009 (Montreal, Canada, 5-11 Sept, 2009).
J-P. Perez, A. Laurain, L. Cerutti, I. Sagnes and A. Garnache, “Thermal management of Mid-IR Sb-based surface emitting lasers”, Proc Exmatec 10 (may 2010), Darmstadt, Germany.