NanoMIR

PUBLICATIONS NANOMIR 2013

M. Myara, M. Sellahi, A. Laurain, A. Michon, I. Sagnes, A. Garnache,“Noise properties of NIR and MIR VECSELs” ,Proc. SPIE Vertical External Cavity Surface Emitting Lasers III, 86060Q (2013), Invited, DOI: 10.1117/12.1000329

T. Taliercio, V. Ntsame Guilengui, L. Cerutti, J.-B. Rodriguez, E. Tournié, ” GaSb-based all-semiconductor mid-IR plasmonics”, Photonics West (SPIE), San Francisco, USA, February 2-7 2013. Proceedings of SPIE, v 8631, Quantum Sensing and Nanophotonic Devices X 8631-72, (2013).

A.N. Baranov, R. Teissier, M. Bahriz, P. Laffaille, G. Lollia, “InAs-based quantum cascade lasers”,International Seminar on Opto- and Nanoelectronics (St. Petersburg, Russia, 1-4 October 2013).

A. N. Baranov, A. M. Monakhov, V.V. Sherstnev, E. Grebenshchikova, Yu.P. Yakovlev, “Mid-IR WGM lasers”,SPIEPhotonics West 2013 (San Francisco, USA, 2-7 February, 2013).

A. Vicet, T. Nguyen Ba, Y. Rouillard, and Q. Gaimard, “Quartz enhanced photoacousic spectroscopy with new antimonide compounds”, TDLS 2013, Moscow, 17-21 June 2013.

A. Vicet, Y. Rouillard, L. Cerutti, R. Teissier, A.N. Baranov, M. Bahriz, E. Tournié, ” Lasers antimoniures et applications à la spectroscopie des gaz”, JNMO, Evian, 21-23 May 2013.

P. Christol “Les détecteurs IR : état des lieux et applications”, Workshop Capteurs, ARCSIS, Marseille, avril 2013

P. Christol, R. Taalat, M. Delmas, J.B. Rodriguez, E. Giard, I. Ribet-Mohamed, “InAs/GaSb superlattice pin photodiode : choice of the SL period to enhance the temperature operation in the MWIR domain”, Photonic West SPIE Conference, San-Francisco, February 2013. Proceedings of the SPIE “Quantum Sensing and Nanophotonic Devices X”,8631, 86312P (2013)

E. Tournié, L. Cerutti, G. Boissier, Y. Rouillard, A.N. Baranov, J.P. Perez, and J. B. Rodriguez, “Antimonide-based compound semiconductors and devices grown by molecular beam epitaxy ” 17th Euro-Molecular Beam Epitaxy (Euro-MBE), Paper Mo-C1, Levi, Finland. 10-13 Mars 2013.

J. B. Rodriguez, L. Cerutti, K. Madiomanana, J. R. Reboul, Y. Rouillard and E. Tournié, “Sb-based compound lasers on silicon substrates”, Silicon & Photonics, Rennes, France, June 11-12 2013

M. Bahriz, G. Lollia, A.N. Baranov, A. Bousseksou, R. Colombelli, and R. Teissier ; Far infrared InAs/AlSb quantum cascade lasers ; Conférence invitee à Photonics West – Quantum Sensing and Nanophotonics Devices X, San Fransisco, CA, USA, 3-7 Feb 2013

T. Taliercio, V. Ntsame Guilengui, L. Cerutti, J.-B. Rodriguez, E. Tournié ; Metal-free plasmonics for infrared applications ; 7th Russian-French workshop on Nanosciences and Nanotechnologies Novosibirsk, Russia, June 3-6 2013

T. Taliercio, V. Ntsame Guilengui, L. Cerutti, J.-B. Rodriguez, E. Tournié ; All-semiconductor plasmonics for mid-IR applications ; Optics + Photonics (SPIE), San Diego, USA, August 25-29 2013 Proceedings of SPIE, v 8807, Nanophotonics Materials X 8807-01, (2013)

E. Tournié, Nano-optoelectronics applications of antimonide-based compounds, International Nano-Optoelectronics Workshop (iNOW’2013), 19 August – 29 August 2013, Cargèse (France)

E. Tournié, GaSb-based nanostrutures and their applications, SemiconNano 2013, 29 September – 4 October 2013, Lake Arrowhead, California (USA).

E. Tournié, L. Cerutti, K. Madiomanana, J.R. Reboul, J.B. Rodriguez, Antimonides, a key-enabling-technology for integrated infrared photonics, Chinese-German Workshop on “Nano-X Fundmental instruments and research on Novel Nanodevices” 4 – 8 November 2013, Suzhou (China).

J. Frougier, G. Baili, M. Alouini, I. Sagnes, H. Jaffres, A. Garnache, C. Deranlot, D. Dolfi, and J-M.George ,“Control of light polarization using optially spin-injeted Vertial External Cavity Surfae Emitting Lasers”,Appl. Phys. Lett., 103 (2013), pp. 252402

M. Myara, M. Sellahi, A. Laurain, A. Belselama, A. Michon, G. Beaudoin, I. Sagnes, L. Cerutti, and A. Garnache,“Low Noise high power tunable surface emitting semiconductor lasers,”Photonik, 4/2013

K. S. Gadedjisso-Tossou, S. Belahsene, M. A. Mohou, E. Tournié and Y. Rouillard “Recombination channels in 2.4 – 3.2 μm GaInAsSb quantum-well lasers”, Semicond. Sci. Technol, 28, 015015 (2013)

A. Ryckeboer, A. Gassenq, M. Muneeb, N. Hattasan, S. Pathak, L. Cerutti, J.B. Rodriguez, E. Tournié, W. Bogaerts, R. Baets, and G. Roelkens ” Silicon-on-insulator spectriometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm”, Optics Express, 21, p.6101-6108 (2013)

D. Sanchez, L. Cerutti, and E. Tournié, “Mid-IR GaSb based Bipolar cascade VCSELs”, IEEE Photon. Technol. Lett. 25, p.882-884, (2013).

A. Lenz, E. Tournié, J. Schuppang, M. Dähne, and H. Eisele, ” Atomic structure of tensile-strained GaAs/GaSb(001) nanostructures”, Appl. Phys. Lett. 102, 102105 (2013).

M. Clairotte, T.W. Adam, A.A. Zardini, U. Manfredi, G. Martini, A. Krasenbrink, A. Vicet, E. Tournié, C. Astorga, ” Effects of low temperature on the cold start gaseous emissions from light duty vehicles fuelled by ethanol-blended gasoline”, Appl. Energy 102, pp. 44-54 (2013)

J. Abautret, J.P. Perez, A. Evirgen, F. Martinez, P. Christol, J. Fleury, H. Sik, R. Cluzel, A. Ferron, J. Rothman, “Electrical modeling of InSb pin photodiode for avalanche operation”, Journal of Applied Physics 113, 183716 (2013)

R. Taalat, I. Ribet-Mohamed, C. Cervera, J.B. Rodriguez, P. Christol “Electrical characterizations of asymmetric InAs/GaSb superlatticeMWIR photodiodes”, Infrared Physics and Technology, 59, 32 (2013)

M. Devautour, A. Michon, G. Beaudoin, I. Sagnes, L. Cerutti and A. Garnache,”Thermal management for high power single frequency tunable diode-pumped VECSEL emitting in the near- and mid-IR” IEEE JSTQE, invited, 19, 1701108 (2013)

M.S. Dunaevskiy, P.A. Alekseev, A.N. Baranov, A.M. Monakhov, R. Teissier, R. Arinero, P. Girard, A.N. Titkov ; Near field imaging of a semiconductor laser by scanning probe microscopy without a photodetector ; Appl. Phys. Lett. 103, 5, 053120, (2013)

M.S. Kagan, I.V. Altukhov, A.N. Baranov, N.D. Il’inskaya, S.K. Paprotskiy, R. Teissier, A.A. Usikova ; Manifestation of the Purcell effect in the conductivity of InAs/AlSb short-period superlattices ; Semiconductors 47, 11, pp. 1478-1480, (2013)

T. Kruczek, K.A. Fedorova, G.S. Sokolovskii, R. Teissier, A.N. Baranov, E.U. Rafailov ; InAs/AlSb widely tunable external cavity quantum cascade laser around 3.2 µm ; Appl. Phys. Lett. 102, 1, 011124, (2013)

A.N. Imenkov, VV. Sherstnev, IV. Kovalev, ND. Il’inskaya, OY. Serebrennikova, R. Teissier, AN. Baranov, YP. Yakovlev ; Temperature dependence of the threshold current in quantum-well WGM lasers (2.0-2.5 µm) ; Semiconductors 47, 6, pp. 831-834, (2013)

M.Bahriz, G. Lollia, P. Laffaille, A.N.Baranov, R.Teissier ; InAs/AlSb quantum cascade lasers operating near 20 μm ; Electronics. Letters 49, 1238,(2013).

Y. Laaroussi, C. Chevallier, F. Genty, N. Fressengeas, L. Cerutti, T. Taliercio, O. Gauthier-Lafaye, P.-F. Calmon, B. Reig, J. Jacquet, and G. Almuneau ; Oxide confinement and high contrast grating mirrors for Mid-infrared VCSELs ; Optical Materials Express 3 (10), 1576 (2013)

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb,E. Ryckeboer, S. Uvin, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J.B. Rodriguez, E. Tournié, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A.C. Peacock, X. Liu, R. Osgood, and W. Green; Silicon-based heterogeneous photonic integrated circuits for the mid-infrared; Optics Material Express, Vol. 3 (9), p.1523, (2013)

Y. Laaroussi, J.B. Doucet, P. Fadel, L. Cerutti, I. Suarez, A. Mlayah, and G. Almuneau; Method for improving the electrical insulating properties of wet thermal oxide of AlAsSb on GaSb substrate; Applied Physics Letters, Vol. 103 (10), 101911, (2013)

D. Sanchez,L. Cerutti, and E. Tournié; Mid-IR GaSb based monolithic vertical-cavity surface-emitting lasers; Journal of physics D: Applied physics, Vol. 46 (49), 495101, December, (2013)

Myara, M. ; Sellahi, M. ; Laurain, A. ; Michon, A. ; Sagnes, I.; Garnache, A. “Noise properties of NIR and MIR VeCSELs”Noise and Fluctuations (ICNF), 2013 22nd International Conference on, 2013 , pp.1 – 4 DOI10.1109/ICNF.2013.6579012

M. Seghilani, M. Sellahi, I. Sagnes, G. Beaudoin, X. Lafosse, L. Legratiet, P. Lalanne, M. Myara, and A. Garnache,”Photonic-crystal based concave mirror for highly coherent stable external-cavity semiconductor laser,” Proc. IEEE CLEO Europe/IQEC 2013, Postdeadline paper

M. Sellahi, M. Myara, I. Sagnes, S. Blin, and A. Garnache,”Generation of Single Frequency Highly Coherent High-Order Laguerre Gaussian Modes with Vertical-External-Cavity-Surface-Emitting-Laser,”Proc. IEEE CLEO Europe/IQEC 2013

M. Sellahi, I. Sagnes, G. Beaudoin, M. Myara, and A. Garnache, “Modeless highly coherent Frequency-shifted-feedback Vertical External Cavity Surface Emitting Laser,” Proc. IEEE CLEO Europe/IQEC 2013

N. Hattasan, A. Gassenq, L. Cerutti, J.B. Rodriguez, E. Tounié and G. Roelkens, ” Integrated Thin-Film GaSb-based Fabry-Perot Lasers: Towards a Fully Integrated Spectrometer on a SOI Waveguide Circuit”, SPIE Photonics West 2012, paper 8631-14, San-Francisco, USA, 3-7 February 2013. Proceedings of SPIE: Quantum Sensing and Nanophotonic DevicesI X, Vol.8631, Art. Numb. 863114-1, 2013

A. Lenz, J. Schuppang, A. Gassenq, T. Taliercio, E. Tournié, M. Daehne, H. Eisele, “GaAs/GaSb(001) nanostructures at the atomic scale”, SPIE Photonics West, Opto-2013, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling X, 3 – 7 February 2013, San Francisco (U.S.A.), paper 8634-21.

D. Sanchez, L. Cerutti, and E. Tournié “GaSb VCSELs with cascaded active-region for improved output power”, 40th Int. Symp. on Compound Semiconductors 2013 (ISCS2013), 19 – 23 May 2013, Kobe (Japan).

J.B. Rodriguez, R. Taalat, M. Delmas, Y. Laaroussi, P. Christol, “[CI.76]- Influence of the GaSb layer thickness on the properties of InAs/GaSb SL photodiodes”, in Proc. 40th Int. Symp. on Compound Semiconductors 2013 (ISCS2013), 19 – 23 May 2013, Kobe (Japan)

P. Christol, R. Taalat, C. Cervera, H. Aït-Kaci, M. Delmas, J.B. Rodriguez, E. Giard , I. Ribet-Mohamed, “InAs/GaSb superlattice photodiodes operating in the midwave infrared range”, in Proc. PHOTOPTICS International Conference, Barcelona, February 2013

E. Giard, I. Ribet-Mohamed, M. Caes, R. Taalat, M. Delmas, J.B. Rodriguez, P. Christol, “Noise measurements for the performance analysis of infrared photodetectors”, in Proc. International Conference on Noise and Fluctuation (ICNF 2013), Montpellier, June 2013

T. Taliercio, V. Ntsame Guilengui, L. Cerutti, J.-B. Rodriguez, E. Tournié ; All-semiconductor plasmonics for mid-IR applications ; Optics + Photonics (SPIE), San Diego, USA, August 25-29 2013 ; Proceedings of SPIE, v 8807, Nanophotonics Materials X 8807-01, (2013)

T. Taliercio (invité), V. Ntsame Guilengui, L. Cerutti, J.-B. Rodriguez, E. Tournié ; GaSb-based all-semiconductor mid-IR plasmonics ; Photonics West (SPIE), San Francisco, USA, February 2-7 2013 ; Proceedings of SPIE, v 8631, Quantum Sensing and Nanophotonic Devices X 8631-72, (2013)

A. Michon, A. Laurain, M. Sellahi, G. Beaudoin, E. Cambril, M. Myara, I. Sagnes, and A. Garnache, “Conception, Propriétés et Cohérence des VeCSELs monofréquence TEM00 en pompage électrique,” in Proc. Optique Paris, 2013

A. Benselama, L. Ferrieres, I. Sagnes, M. Myara, L. Cerutti, V. Lecocq, S. Denet, and A. Garnache, “Design & physical properties of integrated single frequency III−V VeCSEL,” in Proc. 2nd Workshop VeCSEL, 2013, Montpellier

A. Garnache, M. Sellahi, M. Seghilani, R. Paquet, S. Blin, M. Myara, I. Sagnes, G. Beaudoin, X. Lafosse, L. Legratiet, and P. Lalanne, “Control of new spatial, temporal and polarization coherent light states with VeCSEL: VORTEX, continuum, THz, spin,” in Proc. 2nd Workshop VeCSEL, 2013, Montpellier

G. Feugnet, A. Mignot, S. Schwartz, I. Sagnes, and A. Garnache, “Solid State alternative of gas ring laser gyroscope,” in Proc. 2nd Workshop VeCSEL, 2013, Montpellier

I. Gozhyk, G. Beaudoin, S. Janicot, X. Lafosse, A. Garnache, I. Sagnes, P. Georges, and G. Lucas−Leclin, “Improvement of the thermal properties of semiconductor chips at 850 nm,” in Proc. 2nd Workshop VeCSEL, 2013, Montpellier

J. Frougier, G. Baili, M. Alouini, I. Sagnes, H. Jaffres, A. Garnache, D. Dolfi, and J. .−M. George, “Control of light polarization using spin−injected VECSELS,” in Proc. 2nd Workshop VeCSEL, 2013

M. Seghilani, M. Sellahi, I. Sagnes, G. Beaudoin, X. Lafosse, L. Legratiet, P. Lalanne, M. Devautour, M. Myara, and A. Garnache, “A hybrid Photonic Crystal−based semiconductor Bragg mirror: A low loss functional mirror for high−Q external cavity lasers,” in Proc. 2nd Workshop VeCSEL, 2013, Montpellier

M. Seghilani, M. Sellahi, M. Devautour, I. Sagnes, G. Beaudoin, X. Lafosse, L. Legratiet, P. Lalanne, M. Myara, and A. Garnache, “Miroir de Bragg concave à base de cristaux photoniques, pour lasers à semiconducteurs de haute cohérence à cavité externe,” in Proc. Optique Paris, 2013

M. Sellahi, I. Sagnes, G. Beaudoin, M. Myara, and A. Garnache, “Laser à Semiconducteur à Emission Verticale sans mode: Emission cohérente large bande,” in Proc. Optique Paris, 2013

M. Sellahi, I. Sagnes, G. Beaudoin, M. Myara, and A. Garnache, “Modeless highly coherent frequency shifted feedback Vertical External Cavity Surface Emitting Laser,” in Proc. 2nd Workshop VeCSEL, 2013

M. Sellahi, M. Myara, I. Sagnes, G. Beaudoin, and A. Garnache, “Coherent High−order Laguerre−Gauss modes with a high−Q external−cavity semiconductor laser: Standing−wave radial pattern and VORTEX,” in Proc. 2nd Workshop VeCSEL, 2013

M. Sellahi, M. Myara, I. Sagnes, S. Blin, and A. Garnache, “Laser a semiconducteur a emission verticale pour la generation de modes de haute cohérence dans la base de Laguerre−Gauss,” in Proc. Optique Paris, 2013

R. Paquet, M. Sellahi, I. Sagnes, G. Beaudoin, M. Myara, S. Blin, and A. Garnache, “Dual−Frequency Vertical External Cavity Surface Emitting Laser for Terahertz Generation,” in Proc. 2nd Workshop VeCSEL, 2013

V. Lecocq, L. Ferrieres, A. Benselama, M. Myara, I. Sagnes, S. Denet, and A. Garnache, “Design and manufacturing of single frequency compact VeCSEL modules emitting in the NIR and MIR,” in Proc. 2nd Workshop VeCSEL, 2013

D. Chastanet, A. Bousseksou, R. Colombelli, G. Lollia, M. Bahriz, A.N. Baranov, R. Teissier ; Long-infrared (l=19µm) InAs-based QC lasers operating at (almost) room-temperature with metal-metal resonators ; International Conference on Intersubband Transistions in Quantum Wells (ITQW), Bolton Landing, NY, Etats-Unis, 15-20 Sept. 2013.

G. Lollia, M. Bahriz, D. Chastanet, A. Bousseksou, R. Colombelli, A.N. Baranov, R. Teissier ; Improved operation of long wavelength (λ ~ 20 µm) InAs-based quantum cascade laser ; International Conference on Intersubband Transistions in Quantum Wells (ITQW), Bolton Landing, NY, Etats-Unis, 15-20 Sept. 2013.

J. Nicolaï, C. Gatel, B. Warot-Fonrose, A.N. Baranov, R. Teissier, N. Bertru, Y. Zhao, H. Folliot and A. Ponchet ; Strain in antimonide/arsenide multilayers for middle-IR systems ; Euro-MBE 2013, Levi, Finlande, mars 2013

L. Rubaldo, A. Brunner, N. Péré-Laperne, D. Bauza, P. Christol, R. Taalat, J.B. Rodriguez ;Defects study in IR photodetectors by DLTS. II-VI workshop, Chicago, October 2013

V. Ntsame Guilengui, L. Cerutti, J.-B. Rodriguez, E. Tournié and T. Taliercio ; Localized Surface Plasmons Resonances on GaSb-based materials for Infrared applications ; Photonics Plamsonics Magneto-optics 2013, IMAGINENANO 23-26 April 2013, Bilbao (Spain)

D. Sanchez, L. Cerutti, and E. Tournié; VCSELs with cascaded active region for improved output power; International Symposium on Compound Semiconductors 2013 (ISCS), Kobe, Japan, 19-23 may 2013.

A. Evirgen, J.P. Perez, J. Abautret, P. Christol, J. Fleury and H. Sik, ” Fabrication of InSb pin photodiode by MBE for high operating temperature in the midwave infrared range”, 17th Euro-MBE conference, Levi, Finland, March 2013

J. Abautret, J.P. Perez, A. Evirgen, F. Martinez, J. Fleury, H. Sik, R. Cluzel, A. Ferron, J. Rothman, P. Christol, “Simulation des performances de photodiodes à avalanche en InSb pour detection infrarouge”, XVème Journées Nationales µélectronique Optoélectronique (JNMO). Evian, Mai 2013.

Y. Laaroussi, J.B. Rodriguez, R. Taalat, M. Delmas, P. Christol, “Fabrication technologique de photodétecteurs infrarouges à base de superréseaux InAs/GaSb”, XVème Journées Nationales µélectronique Optoélectronique (JNMO). Evian, Mai 2013.

T. Nguyen Ba, Q. Gaimard et A. Vicet “Spectroscopie a quartz a base de diodes lasers antimoniure : application a la détection de méthane et d’éthylène”, XVème Journées Nationales µélectronique Optoélectronique (JNMO). Evian, Mai 2013.

Quentin Gaimard, Tong Nguyen-Ba, Yves Rouillard, Roland Teissier, Aurore Vicet “Diodes laser antimoniures à puits quantiques mono-fréquences pour capteurs de gaz nouvelle génération”, XVème Journées Nationales µélectronique Optoélectronique (JNMO). Evian, Mai 2013.

L. Cerutti, Y. Laaroussi, D. Sanchez, C. Levallois, C. Paranthoen, and G. Almuneau

“GaSb VCSEL with III-As metamorphic confinement layer grown by molecular beam epitaxy” 17th Euro-Molecular Beam Epitaxy (Euro-MBE), Paper Mo-P37, Levi, Finland. 10-13 Mars 2013.

Quantum Sensing and Nanophotonic Devices X, Edited by M. Razeghi, E. Tournié, and G.J. Brown, Proceedings of SPIE, vol. 8631 (2013).

Terahertz emitters, receivers, and applications IV, Edited by M. Razeghi, A.N.Baranov, J. M. Zavad, Proceedings of SPIE v.8846, SPIE, 2013.

Semiconductor lasers: fundamental and applications, Edited by A.N. Baranov and E. Tournié, Woodhead Publishing, ISBN-13:9780857091215.