Tournié, L. Cerutti, J.-B. Rodriguez, J.-P. Perez, P. Christol, R. Teissier, and A.N. Baranov, Antimonide-based optoelectronic devices epitaxially grown on Si substrates, SPIE Photonics West, Opto-2019, “Silicon Photonics XIV”, 2 – 7 February 2019, San Francisco (USA), paper 10923-11.

Tournié, H. Nguyen Van, Z. Loghmari, L. Cerutti, J.-B. Rodriguez, J. Tournet, G. Narcy, G. Boissier, G. Patriarche, M. Bahriz, R. Teissier, A. N. Baranov, InAs/AlSb quantum cascade lasers grown on silicon substrates, SPIE Photonics West, Opto-2019, “Quantum Sensing and Nano electronics and photonics XVI”, 2 – 7 February 2019, San Francisco (USA), paper 10926-41.

Teissier, Z. Loghmari, M. Bahriz, et A. N. Baranov, « Long wave infrared (λ=10-25 µm) quantum cascade lasers for molecular spectroscopy applications », Conférence invitée à PIERS 2019, Rome, Italie, 17-juin-2019.

Tournié, J.-B. Rodriguez, L. Cerutti, A. N. Baranov, R. Teissier, Mid-IR semiconductor lasers epitaxially grown on Si, GDR NANOTERAMIR, 18 – 20 juin, St Raphaël, France.

Tournié, J.-B. Rodriguez, L. Cerutti, R. Teissier, and A.N. Baranov, Epitaxial Integration of GaSb-based mid-IR devices on Silicon, Light Conference 2019, 16 – 18 July 2019, Changchun, China: plenary conference.

Tournié, GaSb materials and devices: the IR optoelectronics toolbox, International nano-optoelectronics workshop (iNOW 2019), 20 – 28 July 2019, Guangzhou, Shenzhen (China).

Luna, O. Delorme, L. Cerutti, E. Tournié, J.-B. Rodriguez, and A. Trampert, “Transmission Electron Microscopy of (In,Ga)(Sb,Bi) epilauyers and quantum wells” Invité: 10th International Workshop on Bismuth Containing Semiconductors, Paper Mo-7, Toulouse, France, 21-24 July

J.B. Rodriguez, M. Rio Calvo, L. Cerutti, L. Monge Bartolomé, M. Bahriz, A.N. Baranov, R. Teissier and E. Tournié, Near- to mid-IR antimonide optoelectronic devices integrated on on-axis (001) Si substrates,
The 9th International Symposium on Photonics and Electronic Convergence (ISPEC 2019), 26 – 27 November 2019, Tokyo, Japan

Rodolphe Vaillon, Jean-Philippe Perez, Christophe Lucchesi, Dilek Cakiroglu, Pierre-Olivier Chapuis, Thierry Taliercio, and Eric Tournié, Micron-sized liquid nitrogen-cooled indium antimonide photovoltaic cell for near-field thermophotovoltaics, Optics Expr., 27(4), A11 (2019).

Tournet, S. Parola, A. Vauthelin, D. Montesdeoca Cardenes, S. Soresi, F. Martinez, Q. Lu, Y. Cuminal, P.J. Carrington, J. Décobert, A. Krier, Y. Rouillard and E. Tournié, GaSb-based Solar Cells for Multi-junction Integration on Si substrates, Solar Energy Materials and Solar Cells 191, 444 (2019).

Loghmari, M. Bahriz, A. Meguekam, R. Teissier, et A. N. Baranov, « InAs-based quantum cascade lasers emitting close to 25 µm », Electron. Lett., vol. 55, no 3, p. 144‑145, févr. 2019.

Roman Rousseau, Zeineb Loghmari, Michael Bahriz, Kaim Chamassi, Roland Teissier, Alexei N. Baranov and Aurore Vicet, Off-beam QEPAS sensor using a 11μm DFB-QCL with an optimized acoustic resonator – Optics Express 27 (5) 7435-7446,  2019.

S. Krishtopenko, W. Desrat, K. E. Spirin, C. Consejo, S. Ruffenach, F. Gonzalez-Posada, B. Jouault, W. Knap, K. V. Maremyanin, V. I. Gavrilenko, G. Boissier, J. Torres, M. Zaknoune, E. Tournié, and F. Teppe, Massless Dirac fermions in III-V semiconductor quantum wells, Phys. Rev. B 99, 121405(R) (2019).

S. Krishtopenko, S. Ruffenach, F. Gonzalez-Posada, C. Consejo, W. Desrat, B. Jouault, W. Knap, M. A. Fadeev, A. M. Kadykov, V. V. Rumyantsev, S. V. Morozov, G. Boissier, E. Tournié, V. I. Gavrilenko, and F. Teppe, Terahertz Spectroscopy of Two-Dimensional Semimetal in Three-Layer InAs/GaSb/InAs Quantum Well, JETP Letters 109 (2), 96 – 101 (2019).

Parola, A. Vauthelin, J. Tournet, J. Kret, J. El Husseini, F. Martinez, Y. Rouillard, E. Tournié, Y. Cuminal, Improved efficiency of GaSb solar cells using an Al0.50Ga0.50As0.04Sb0.96 window layer, Solar Energy Materials and Solar Cells 200, 110042 (2019).

Zeghouane, G. Avit, T. W. Cornelius, D. Salomon, Y. André, C. Bougerol, T. Taliercio, A. Meguekam-Sado, P. Ferret, D. Castelluci, E. Gil, E. Tournié, O. Thomas and A. Trassoudaine, Selective growth of ordered hexagonal InN nanorods, CrystEngComm 21, 2702 – 2708 (2019).

Kudrawiec, J. Kopaczek, O. Delorme, M. P. Polak, M. Gladysiewicz, E. Luna, L. Cerutti, E. Tournié, and J. B. Rodriguez, Type I GaSb1-xBix/GaSb quantum wells dedicated for mid infrared laser applications: Photoreflectance studies of bandgap alignment, J. Appl. Phys. 125, 205706 (2019).

D.A. Díaz-Thomas, O. Stepanenko, M. Bahriz, S. Calvez, E. Tournié, A.N. Baranov, G. Almuneau, and L. Cerutti,, Interband cascade lasers with AlGaAsSb cladding layers emitting at 3.3 µm, Optics Express, 27 (22-28), 31425 (2019)

Delorme, L. Cerutti, E. Luna, A. Trampert, E. Tournié, and J.-B. Rodriguez, Molecular-beam epitaxy of GaInSbBi alloys, Journal of Applied Physics 126, 155304 (2019); https://doi.org/10.1063/1.5096226

Rio Calvo, J.-B. Rodriguez, L. Cerutti, M. Ramonda, G. Patriarche, E. Tournié, Molecular-beam epitaxy of GaSb on 6°-offcut (001) Si using a GaAs nucleation layer, Journal of Crystal Growth, https://doi.org/10.1016/j.jcrysgro.2019.125299

Niehle, J.-B. Rodriguez, L. Cerutti, E. Tournié, and A. Trampert, The Interaction of Extended Defects as the Origin of Step Bunching in Epitaxial III–V Layers on Vicinal Si(001) Substrates, Phys. Stat. Sol. RRL 13, 1900290 (2019). https://doi.org/10.1002/pssr.201900290

Delorme, L. Cerutti, E. Luna, A. Trampert, E. Tournié and J.-B. Rodriguez, “Study of In incorporation into GaSbBi alloys”, 20th European Workshop on Molecular Beam Epitaxy (EuroMBE 2019), February 2019, Lenggries, Germany

Marta Rio Calvo, Jean-Baptiste Rodriguez, Laurent Cerutti, and Eric Tournié, GaSb growth on Si (001) using a GaAs nucleation layer, 20th European Workshop on Molecular Beam Epitaxy (EuroMBE 2019), February 2019, Lenggries, Germany.

Teissier, A. N. Baranov, H. Nguyen-Van, Z. Loghmari, et M. Bahriz, « Terahertz quantum cascade laser with non-resonant extraction », Communication orale présenté à French German THz Conference 2019, Kaiserslautern, Allemagne, 05-avr-2019.

Barho, F. Gonzalez-Posada, L. Cerutti and T. Taliercio, “Surface-Enhanced Thermal Emission Spectroscopy with Heavely-doped-Semiconductor Metamaterial Perfect Absorber” Oral: International Conference on Enhanced Spectroscopy, London, Canada, 17-20 June 2019.

Barho, F. Gonalzez-Posada, L. Cerutti, and T. Taliercio, “Molecular sensing with surface enhanced thermal emission spectroscopy” European Materials Research Society Spring Meeting (EMRS 2019), paper P 7.6, Nice, France, 27-31 May 2019

D.A. Diaz Thomas, O. Stepanenko, T. Batte, M. Bahriz, S. Calvez, C. Paranthoen, E. Tournié, G. Almuneau, C. Levallois, and L. Cerutti, “Toward MIR VCSELs operating in CW at RT” Oral: Compound semiconductor Week (CSWeek 209), Paper WeB2-1, Nara, Japan, 19-23 May 2019

Delorme, L. Cerutti, E. Luna, A. Trampert, E. Tournié, and J.-B. Rodriguez, “Molecular-beam epitaxy of Ga(In)SbBi alloys and QWs” Oral: 10th International Workshop on Bismuth Containing Semiconductors, Paper Mo-2, Toulouse, France, 21-24 July

 

Barho, L. Cerutti, F. Gonzalez-Posada Flores, and T. Taliercio “Metamaterial perfect absorber based on heavily doped semiconductor for thermal emission” Poster: Compound semiconductor Week (CSWeek 2019), Paper MoP-D-6, Nara, Japan, 19-23 May 2019

Barho, F. Gonzalez-Posada Flores, L. Cerutti, and T. Taliercio “Bio-sensing by thermal emission of metamaterial perfect absorber” Poster: Surface Plasmon Photonics (SPP9), Paper no. 212, Copenhagen, Denmark, 26-31 May 2019

Maës, G. Vincent, F. Gonzalez-Posada Flores, L. Cerutti, R. Haïdar, and T. Taliercio “Semiconductors nanostructures for spectral filtering” Poster: Surface Plasmon Photonics (SPP9), Paper no. 212, Copenhagen, Denmark, 26-31 May 2019

Monge Bartolomé, M. Bahriz, D.A. Diaz-thomas, G. Narcy, M. Rio Calvo, J.B. Rodriguez, L. Cerutti and E. Tournié, “Toward mid-IR optoelectronic devices on silicon photonic integrated circuits” International nano-optoelectronics workshop (iNOW 2019), Guangzhou, China, 20-28 July 2019.

Delorme, L. Cerutti, E. Tournié, and J.-B. Rodriguez, “In-Situ determination of the growth conditions of GaSbBi alloys” Poster: 10th International Workshop on Bismuth Containing Semiconductors, Paper Poster 3, Toulouse, France, 21-24 July

Tournié, Molecular-beam epitaxy of antimonides for optoelectronic devices, In: Molecular-Beam Epitaxy: Materials and Devices for Electronics and Optoelectronics, edited by H. Asahi and Y. Horikoshi (Wiley, New York, 2019), pp. 233 – 246. ISBN: 978-1-119-35502-1.

Delorme, L. Cerutti, R. Kudrawiec, E. Luna, J. Kopaczek, M. Gladysiewicz, A. Trampert, E. Tournié, and J.-B. Rodriguez, GaSbBi alloys and heterostructures: fabrication and properties, in: Bismuth-Containing Alloys and Nanostructures, edited by Wang, Shumin and Lu, Pengfei (Springer Series in Materials Science, Vol. 285, 2019), pp. 125-161. ISBN : 978-981-13-8077-8.