Heterogeneous integration of mid-IR Photodiodes on SOI

Our latest article has just been published by Optics Letters, with Xin GUO from Ghent University and IMEC (Belgium) as lead author.

We demonstrate the heterogeneous integration of GaInAsSb–GaSb photodiodes on 220 nm SOI photonic integrated circuits (PICs) using the micro-transfer-printing (μTP) technology, for operation in the short-wave infrared (SWIR) wavelength region. Utilizing an evanescent coupling scheme between a silicon waveguide and a III–V structure, the device exhibits a room temperature responsivity of 1.23 and 1.25 A/W at 2.3 and 2.45 μm, respectively. This enables the realization of photonic integrated circuits for SWIR applications. More details in Guo et al..