New publication: ICLs on Si and GaAs

In this article, we describe the properties of interband cascade lasers (ICLs) emitting at 4.7 µm grown on GaSb, GaAs, and Si substrates. All lasers operated in continuous-wave mode up to 30°C, and aging tests on ICLs grown on Si over 500 hours showed no performance degradation. These results confirm the tolerance of ICLs to dislocations, even at long wavelengths. More details here.