New article: In situ dislocation motion….

In collaboration with the Paul-Drude-Institute, Berlin, Germany, we have studied the evolution of the dislocation network in a GaSb/AlSb/GaSb heterostructure grown on silicon (Si). Samples have been annealed in a transmission electron microscope to observe dislocation motion. Don’t miss the fascinating supplemental material where you can see dislocations moving around and recombining! Download the paper here.