NanoMIR

PEOPLE

Permanent staff

  • Dr Richard ARINERO
    • Maître de Conférences HDR
    • Phone: +33-467.14.32.98
    • email
  • Dr Michaël BAHRIZ
    • Maître de Conférences
    • Phone: +33-467.14.38.25
    • email
  • Dr Alexei BARANOV
    • Directeur de recherche CNRS (Emeritus)
    • Phone: +33-467.14.34.72
    • email
  • Dr Laurent CERUTTI
    • Maître de Conférences HDR
    • Phone: +33-467.14.32.81
    • email
  • Prof Philippe CHRISTOL
    • Professeur
    • Phone: +33-467.14.38.26
    • email
  • Dr Fernando GONZALEZ-POSADA
    • Maître de Conférences HDR
    • Phone: +33-467.14.32.86
    • email
  • Mme Delphine JOURDAIN
    • Assistant-Ingénieure
    • Phone: +33-467.14.32.82
    • email
  • Mme Ariane MEGUEKAM-SADO
    • Ingénieure d’Etudes
    • Phone: +33-467.14.xx.xx
    • email
  • Dr Jean-Philippe PEREZ
    • Maître de Conférences HDR
    • Phone: +33-467.14.38.22
    • email
  • Dr Jean-Baptiste RODRIGUEZ
    • Directeur de recherche CNRS
    • Phone: +33-467.14.32.81
    • email
  • Dr Yves ROUILLARD
    • Maître de Conférences HDR
    • Phone: +33-467.14.39.03
    • email
  • Prof Thierry TALIERCIO
    • Professeur
    • Phone: +33-467.14.34.71
    • email
  • Prof Eric TOURNIE
    • Professeur
    • Phone: +33-467.14.32.80
    • email
  • Prof Aurore VICET
    • Professeure
    • Phone: +33-467.14.39.04
    • email

Post docs and PhD students

  • Théo SABARDEIL, Molecular-beam epitaxy of InGaAsSb quaternary alloys, and application to infrared devices, in collaboration with III-V Lab (2022 – 2025).
  • Matthias TORNAY, New architectures of infrared T2SL photodetectors, in collaboration with LYNRED (2022 – 2025).
  • Soufiane HAJII, Fabrication of a THz modulator with photogenerated metasurfaces (2022 – 2025).
  • Maëva FAGOT, Antimonide interband cascade lasers grown on GaAs and Si substrates (2022 – 2025).
  • Hassen MEZOUAR, Impact of radiations on T2SL infrared photodetectors (2023 – 2026).
  • Milan SILVESTRE, Integration of antimonide III-V semiconductors on Si and Ge based substrates (2023 – 2026).
  • Yannis BILLIET, Integration of interband cascade lasers for comb generation in the midinfrared (2023 – 2026).
  • Lydia KACEL, Single mode interband cascade lasers for gas sensing, in collaboration with MIRSENSE (2024 – 2027).
  • Sow GALLO, Molecular beam epitaxy of ferromagnetic GaSb-based materials for quantum technologies (2024 – 2027).
  • Sébastien LACAZE, Integration of III-V semiconductor lasers on SiGe platforms for comb generation (2024 – 2027).
  • Sirine BOULOS, Co-integration of GaSb-optoelectronic devices grown on Si with chalcogenide photonic circuits (2024 – 2027).
  • Camélia LOURDIANE, III-V heterostructures grown on InP-on-Si templates: application to high bit rate devices, in collaboration with III-V Lab (2024 – 2027).
  • Julie GOUTORBE, High power interband cascade laser arrays (2024-2027).

Alumni

In this section, you will find the names, thesis title, graduation date, and last (known) employer of our alumni (section under construction!).

  • Cyril CERVERA, The InAs/GaSb T2SL for infrared photodetectors (2011): CEA-Leti.
  • Youness LAAROUSSI, Development of mid-infrared VCSELs with sub-wavelength grating mirors (2012): Arvida.
  • Dorian SANCHEZ, Mid-IR VCSELs (2012): InSpek.
  • Rachid TAALAT, Fabrication and electro-optical characterization of InAs/GaSb photodetectors (2013): MBDA.
  • Vilianne N’TSAME GUILENGUI, Plasmonic resonators based on highly-doped InAsSb: toward an all-semiconductor plasmonics (2013): Delfmems.
  • Axel EVIRGEN, InSb photodetectors grown by molecular-beam epitaxy for high temperature operation (2014): Thales-RT.
  • Johan ABAUTRET, Design, fabrication and characterization of InSb avalanche photodiodes (2014): MIRSENSE.
  • Marie DELMAS, Analysis of InAs/GaSb T2SL photodetectors (2015): IRNOVA
  • Karine MADIOMANANNA, Molecular-beam epitaxy of GaSb-based materials on Silicon substrates (2015): CORIAL.
  • Sophie ROUX, Frequency conversion toward long wavelengths in periodically poled semiconductor waveguides (2016): Thales Alenia Space.
  • Andrea CASTELLANO, Sb-based telecom lasers: toward integration on Silicium (2016).
  • Fatima OMEIS, Theoretical and experimental study of plasmonic metamaterials for infrared applications (2017): ST Microelectronics.
  • Quentin DURLIN, XBn InAsSb photodetectors for high temperature operation (2017): CEA-Leti.
  • Franziska BAHRO, Engineering plasmonic resonators based on highly-doped semiconductors for absorption exaltation (2017): Schneider Optical Machines.
  • Mario BOMERS, Functionalised semiconductor metamaterials and plasmonics for high sensitivity chemical and bio-sensing (2018): German Research Foundation.
  • Julie TOURNET, III-Sb solar cells and their integration on Silicon (2019): Australia National University.
  • Olivier DELORME, Incorporating bismuth into III-Sb semiconductors grown by molecular beam epitaxy (2019): Nokia-Bell Labs.
  • Eduardo ALVEAR, Photogenerated metasurfaces for THz applications (2019): Valeo.
  • Rodolphe ALCHAAR, InAs/GaSb T2SL photodetectors for the LWIR (2019): Inst. Nanosciences de Paris (INSP).
  • Clément MAES, Mid-IR active plasmonics with highly doped semiconductors (2020): Coralium.
  • Marta RIO-CALVO, Epitaxy of III-Sbs on on-axis (001) Si for integrated photonics (2020): OSRAM.
  • Daniel Andres Diaz-Thomas, Mid-IR interband cascade VCSELs (2020): Thalès-RT.