Staff: J.-B. Rodriguez, L. Cerutti, E. Tournié.
Collaborations: A. Trampert, E. Luna, PDI-Berlin (Germany); R. Kudrawiecz, University of Wroclaw (Poland).
Since 2016 we are investigating the incorporation of Bi in III-Sb alloys and heterostructures. Incorporating Bi in III-Sbs is challenging and it has been little studied. We elucidated the peculiar growth conditions needed to get high incorporation, and we achieved record the record incorporation of 14% in layers and quantum wells (QWs). We have demonstrated the first GaSbBi-based QW laser diode. It operated up to room temperature. We have also investigated GaInSbBi alloys and QWs, and demonstrated a competition between In and Bi incorporation. We have studied the microstructure and electronic properties of our samples in collaboration with the Paul Drude Institut of Berlin and the University of Wroclaw, respectively. All results can be found in a series of papers published in Applied Physics Letters, J. Applied Physics, J. Crystal Growth and Semiconductor Science and Technology.